ROHM Transistor, 150 mA NPN, 50 V, 6-Pin SOT-457
- RS庫存編號:
- 215-9758P
- 製造零件編號:
- IMX1T110
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計 100 件 (按連續帶提供)*
TWD670.00
(不含稅)
TWD704.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,650 件從 2026年4月27日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 100 - 200 | TWD6.70 |
| 250 - 450 | TWD6.60 |
| 500 - 950 | TWD6.40 |
| 1000 + | TWD6.20 |
* 參考價格
- RS庫存編號:
- 215-9758P
- 製造零件編號:
- IMX1T110
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Package Type | SOT-457 | |
| Mount Type | Surface | |
| Transistor Configuration | Dual | |
| Maximum Collector Base Voltage VCBO | 60V | |
| Maximum Power Dissipation Pd | 150mW | |
| Maximum Transition Frequency ft | 180MHz | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 120 | |
| Minimum Operating Temperature | 0°C | |
| Maximum Emitter Base Voltage VEBO | 7V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 6 | |
| Series | IMX1 | |
| Standards/Approvals | No | |
| Height | 1.3mm | |
| Length | 3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Package Type SOT-457 | ||
Mount Type Surface | ||
Transistor Configuration Dual | ||
Maximum Collector Base Voltage VCBO 60V | ||
Maximum Power Dissipation Pd 150mW | ||
Maximum Transition Frequency ft 180MHz | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 120 | ||
Minimum Operating Temperature 0°C | ||
Maximum Emitter Base Voltage VEBO 7V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 6 | ||
Series IMX1 | ||
Standards/Approvals No | ||
Height 1.3mm | ||
Length 3mm | ||
Automotive Standard No | ||
The Rohm general purpose transistor having voltage rating of 50V. It is mainly used in general purpose small signal amplifier. The transistor element is independent.
Mounting cost and area can be cut in half