onsemi AFGHL50T65SQDC Bipolar Transistor, 100 A NPN, 650 V, 3-Pin TO-247
- RS庫存編號:
- 195-2574
- 製造零件編號:
- AFGHL50T65SQDC
- 製造商:
- onsemi
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 2 件)*
TWD628.00
(不含稅)
TWD659.40
(含稅)
訂單超過 $1,300.00 免費送貨
有限的庫存
- 加上 26 件從 2026年5月06日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 6 | TWD314.00 | TWD628.00 |
| 8 - 14 | TWD306.00 | TWD612.00 |
| 16 + | TWD301.00 | TWD602.00 |
* 參考價格
- RS庫存編號:
- 195-2574
- 製造零件編號:
- AFGHL50T65SQDC
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 100A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Power Dissipation Pd | 238W | |
| Minimum Operating Temperature | 175°C | |
| Maximum Transition Frequency ft | 1MHz | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 175°C | |
| Pin Count | 3 | |
| Standards/Approvals | AEC-Q101 | |
| Series | AFGHL50T65SQDC | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 100A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Power Dissipation Pd 238W | ||
Minimum Operating Temperature 175°C | ||
Maximum Transition Frequency ft 1MHz | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 175°C | ||
Pin Count 3 | ||
Standards/Approvals AEC-Q101 | ||
Series AFGHL50T65SQDC | ||
Automotive Standard AEC-Q101 | ||
Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.
Copacked with SiC schottky barrier diode
Ultra low reverse recovery loss
Maximum Junction Temperature, Tj=175°C
Higher reliability
Very low switching and conduction losses
Positive temperature co-efficient
Tight parameter distribution
Applications
Automotive
Industrial Inverter
DC-DC Converter
PFC, Totem Pole Bridgeless
Hard Switching
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