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選取全部	屬性	值
	品牌	onsemi
	Product Type	Digital Transistor
	Maximum Collector Emitter Voltage Vceo	6V
	Mount Type	Surface
	Transistor Configuration	Single
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Maximum Emitter Base Voltage VEBO	6V
	Maximum Power Dissipation Pd	150W
	Maximum Continuous Collector Current Ic	10A
	Transistor Polarity	NPN
	Minimum DC Current Gain hFE	150
	Pin Count	2
	Maximum Operating Temperature	175°C
	Length	9.65mm
	Series	BUB323Z
	Standards/Approvals	RoHS, Pb-Free
	Height	4.06mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 onsemi
	Product Type Digital Transistor
	Maximum Collector Emitter Voltage Vceo 6V
	Mount Type Surface
	Transistor Configuration Single
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Maximum Emitter Base Voltage VEBO 6V
	Maximum Power Dissipation Pd 150W
	Maximum Continuous Collector Current Ic 10A
	Transistor Polarity NPN
	Minimum DC Current Gain hFE 150
	Pin Count 2
	Maximum Operating Temperature 175°C
	Length 9.65mm
	Series BUB323Z
	Standards/Approvals RoHS, Pb-Free
	Height 4.06mm
	Automotive Standard AEC-Q101

Datasheet BUB323ZT4G

The BUB323Z is a planar, monolithic, high voltage bipolar power Darlington transistor with a built-in Active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control.

Integrated High–Voltage Active Clamp

Tight Clamping Voltage Window (350 V to 450 V)Guaranteed Over the –40°C to +125°C Temperature Range

Clamping Energy Capability 100% Tested in a Live Ignition Circuit

High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range

Design Guarantees Operation in SOA at All Times

Pb-Free Packages are Available

onsemi Digital Transistor, 6 V NPN 10 A Surface, 2-Pin

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