onsemi Transistor, 10 A NPN, 40 V, 3-Pin TO-225
- RS庫存編號:
- 184-4314
- 製造零件編號:
- MJE200G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 盒，共 500 件）*
TWD6,450.00
(不含稅)
TWD6,770.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 500 件從 2026年9月16日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每盒* |
|---|---|---|
| 500 - 500 | TWD12.90 | TWD6,450.00 |
| 1000 - 1500 | TWD12.70 | TWD6,350.00 |
| 2000 + | TWD12.40 | TWD6,200.00 |
* 參考價格
- RS庫存編號:
- 184-4314
- 製造零件編號:
- MJE200G
- 製造商:
- onsemi
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 40V | |
| Package Type | TO-225 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 25V dc | |
| Maximum Transition Frequency ft | 10MHz | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 10 | |
| Maximum Emitter Base Voltage VEBO | 8V dc | |
| Maximum Power Dissipation Pd | 15W | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 27.1mm | |
| Length | 8mm | |
| Series | MJE200 | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 40V | ||
Package Type TO-225 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 25V dc | ||
Maximum Transition Frequency ft 10MHz | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 10 | ||
Maximum Emitter Base Voltage VEBO 8V dc | ||
Maximum Power Dissipation Pd 15W | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 27.1mm | ||
Length 8mm | ||
Series MJE200 | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
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