onsemi MJH11020G Transistor, 30 A NPN, 250 V, 3-Pin TO-218

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小計(30 件, 每管30個)*

TWD3,315.00

(不含稅)

TWD3,480.60

(含稅)

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  • 從 2027年1月13日 發貨
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單位
每單位
每管*
30 - 30TWD110.50TWD3,315.00
60 - 90TWD108.10TWD3,243.00
120 +TWD105.90TWD3,177.00

* 參考價格

RS庫存編號:
184-0973
製造零件編號:
MJH11020G
製造商:
onsemi
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品牌

onsemi

Product Type

Transistor

Maximum DC Collector Current Idc

30A

Maximum Collector Emitter Voltage Vceo

250V

Package Type

TO-218

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

200V

Transistor Polarity

NPN

Maximum Emitter Base Voltage VEBO

5V

Maximum Power Dissipation Pd

150W

Minimum DC Current Gain hFE

100

Maximum Transition Frequency ft

1MHz

Minimum Operating Temperature

-65°C

Pin Count

3

Maximum Operating Temperature

150°C

Width

5.3mm

Standards/Approvals

No

Length

16.26mm

Height

33.15mm

Automotive Standard

No

COO (Country of Origin):
CN
The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications.

High DC Current Gain @ 10 Adc -

hFE = 400 Min (All Types)

Collector-Emitter Sustaining Voltage

VCEO(sus) = 150 Vdc (Min) MJH11018, 17

VCEO(sus) = 200 Vdc (Min) - MJH11020, 19

VCEO(sus) = 250 Vdc (Min) - MJH11022, 21

Low Collector-Emitter Saturation Voltage

VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A

VCE(sat) = 1.8 V (Typ) @ IC = 10 A

Monolithic Construction

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