onsemi Transistor, 30 A NPN, 250 V, 3-Pin TO-218

可享批量折扣

小計(1 管,共 30 件)*

TWD3,384.00

(不含稅)

TWD3,553.20

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 2026年7月20日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位
每單位
每管*
30 - 30TWD112.80TWD3,384.00
60 - 90TWD110.30TWD3,309.00
120 +TWD108.10TWD3,243.00

* 參考價格

RS庫存編號:
184-0973
製造零件編號:
MJH11020G
製造商:
onsemi
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

onsemi

Product Type

Transistor

Maximum DC Collector Current Idc

30A

Maximum Collector Emitter Voltage Vceo

250V

Package Type

TO-218

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

200V

Minimum Operating Temperature

-65°C

Maximum Transition Frequency ft

1MHz

Maximum Power Dissipation Pd

150W

Maximum Emitter Base Voltage VEBO

5V

Transistor Polarity

NPN

Minimum DC Current Gain hFE

100

Pin Count

3

Maximum Operating Temperature

150°C

Height

33.15mm

Standards/Approvals

No

Length

16.26mm

Automotive Standard

No

COO (Country of Origin):
CN
The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications.

High DC Current Gain @ 10 Adc -

hFE = 400 Min (All Types)

Collector-Emitter Sustaining Voltage

VCEO(sus) = 150 Vdc (Min) MJH11018, 17

VCEO(sus) = 200 Vdc (Min) - MJH11020, 19

VCEO(sus) = 250 Vdc (Min) - MJH11022, 21

Low Collector-Emitter Saturation Voltage

VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A

VCE(sat) = 1.8 V (Typ) @ IC = 10 A

Monolithic Construction

相關連結