The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C) 150°C Operating Junction Temperature Matched Dual Die Construction (10 A per Leg or 20 A per Package) High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Mechanical Characteristics: Case: Epoxy, Moulded Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily solder able Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
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