Infineon EB 2ED2410 3D 1BCDP MOSFET Gate Driver for Gate Driver, Power MOSFET for 2ED2410-EM 24 V Evaluation Motherboard
- RS庫存編號:
- 273-2058
- 製造零件編號:
- EB2ED24103D1BCDPTOBO1
- 製造商:
- Infineon
當前暫無庫存，可於19/08/2024發貨，6 工作日送達。
已增加
單價（不含稅） 個
TWD3,946.00
(不含稅)
TWD4,143.30
(含稅)
| 單位 | Per unit |
| 1 + | TWD3,946.00 |
- RS庫存編號:
- 273-2058
- 製造零件編號:
- EB2ED24103D1BCDPTOBO1
- 製造商:
- Infineon
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
EiceDRIVER™ APD 2ED2410-EM - 24 V evaluation MOSFET daughterboard, common drain, pre-charging
This daughterboard belongs to a family of evaluation boards that can be combined with the 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M). These daughterboards are used to address different MOSFET and shunt arrangements typically found in modern automotive power distributions for 12 and 24 V board nets.
This daughterboard EB 2ED2410 3D 1BCDP is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common drain configuration. In addition, the load could be pre-charged with a dedicated pre-charge path.
This daughterboard EB 2ED2410 3D 1BCDP is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common drain configuration. In addition, the load could be pre-charged with a dedicated pre-charge path.
Following other daughterboards are available:
•EB 2ED2410 3D 1BCS: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCD: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCSP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCD: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCSP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging
Summary of Features
•Suitable for 12 and 24 V board nets
•Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
•0,5 mOhm shunt resistor
•60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
•MOSFET temperature monitoring with NTC resistors
•Dedicated pre-charge path for loads with high input capacitance
•Nominal current up to 20 A continuous or 30 A for 10 min
•Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
•0,5 mOhm shunt resistor
•60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
•MOSFET temperature monitoring with NTC resistors
•Dedicated pre-charge path for loads with high input capacitance
•Nominal current up to 20 A continuous or 30 A for 10 min
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
屬性 | 值 |
|---|---|
| Power Management Function | MOSFET Gate Driver |
| For Use With | 2ED2410-EM 24 V Evaluation Motherboard |
| Kit Classification | Evaluation Board |
| Featured Device | Gate Driver, Power MOSFET |
| Kit Name | EB 2ED2410 3D 1BCDP |