FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation 3.0 A Peak Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail 20 kV/μs Minimum Common Mode Rejection Wide Supply Voltage Range: 10 V to 30 V Fast Switching Speed Over Full Operating Temperature Range – 210 ns Maximum Propagation Delay – 65 ns Maximum Pulse Width DistortionUnder-Voltage Lockout (UVLO) with Hysteresis Extended Industrial Temperate Range: -40°C to 100°C
Applications AC and Brushless DC Motor Drives Industrial Inverter Uninterruptible Power Supply Induction Heating Isolated IGBT/Power MOSFET Gate Drive
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