- RS庫存編號:
- 864-8795
- 製造零件編號:
- FGA60N65SMD
- 製造商:
- onsemi
此產品暫時不接受預訂。
抱歉,此產品暫無現貨,目前也不接受預訂。
已增加
單價(不含稅) 個
TWD166.00
(不含稅)
TWD174.30
(含稅)
單位 | Per unit |
1 - 7 | TWD166.00 |
8 - 14 | TWD162.00 |
15 + | TWD159.00 |
- RS庫存編號:
- 864-8795
- 製造零件編號:
- FGA60N65SMD
- 製造商:
- onsemi
法例與合規
產品詳細資訊
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
屬性 | 值 |
---|---|
Maximum Continuous Collector Current | 120 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 600 W |
Package Type | TO-3PN |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.8 x 5 x 20.1mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |