onsemi NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 842-7898
- 製造零件編號:
- NGTB35N65FL2WG
- 製造商:
- onsemi
當前暫無庫存，可於09/07/2025發貨，6 工作日送達。
已增加
單價（不含稅） 個 (每包:2個)
TWD154.00
(不含稅)
TWD161.70
(含稅)
| 單位 | Per unit | Per Pack* |
| 2 - 6 | TWD154.00 | TWD308.00 |
| 8 - 14 | TWD149.50 | TWD299.00 |
| 16 + | TWD148.00 | TWD296.00 |
| * 參考價格 | ||
- RS庫存編號:
- 842-7898
- 製造零件編號:
- NGTB35N65FL2WG
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
屬性 | 值 |
|---|---|
| Maximum Continuous Collector Current | 70 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 300 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 16.26 x 5.3 x 21.08mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |