IXYS IXYH20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 808-0265P
Mfr. Part No.:: IXYH20N120C3
Brand:: IXYS

IXYS IXYH20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

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Bulk discount available

Subtotal 8 units (supplied in a tube)*

TWD1,620.00

(exc. VAT)

TWD1,700.96

(inc. VAT)

添加 8 units 件可免費送貨

下方訂單 TWD1,300.00（不含稅）成本 TWD500.00。

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Units	Per unit
8 - 14	TWD202.50
16 +	TWD199.50

*price indicative

RS Stock No.:: 808-0265P
Mfr. Part No.:: IXYH20N120C3
Brand:: IXYS

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	品牌	IXYS
	Maximum Continuous Collector Current	40 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	278 W
	Package Type	TO-247
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	50kHz
	Transistor Configuration	Single
	Dimensions	16.26 x 5.3 x 21.46mm
	Minimum Operating Temperature	-55 °C
	Maximum Operating Temperature	+175 °C

	Select all
	品牌 IXYS
	Maximum Continuous Collector Current 40 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 278 W
	Package Type TO-247
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 50kHz
	Transistor Configuration Single
	Dimensions 16.26 x 5.3 x 21.46mm
	Minimum Operating Temperature -55 °C
	Maximum Operating Temperature +175 °C

IGBT Discretes, IXYS XPT series

The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.