IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole
- RS庫存編號:
- 791-7425P
- 製造零件編號:
- IXGP20N120B3
- 製造商:
- IXYS
可供預購。
單價（不含稅） 個 (以每管裝提供)
TWD203.50
(不含稅)
TWD213.68
(含稅)
單位 | 每單位 |
|---|---|
| 14 - 24 | TWD203.50 |
| 26 + | TWD200.50 |
- RS庫存編號:
- 791-7425P
- 製造零件編號:
- IXGP20N120B3
- 製造商:
- IXYS
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產品詳細資訊
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
屬性 | 值 |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 180 W |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 20kHz |
| Transistor Configuration | Single |
| Dimensions | 10.66 x 4.83 x 16mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |