IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 791-7416P
- 製造零件編號:
- IXGH48N60B3
- 製造商:
- IXYS
100 現貨庫存，可於6工作日發貨。
單價（不含稅） 個 (以每管裝提供)
TWD413.50
(不含稅)
TWD434.18
(含稅)
單位 | 每單位 |
|---|---|
| 16 - 28 | TWD413.50 |
| 30 + | TWD408.00 |
- RS庫存編號:
- 791-7416P
- 製造零件編號:
- IXGH48N60B3
- 製造商:
- IXYS
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產品詳細資訊
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
屬性 | 值 |
|---|---|
| Maximum Continuous Collector Current | 280 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 300 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 40kHz |
| Transistor Configuration | Single |
| Dimensions | 16.26 x 5.3 x 21.46mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |