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    Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

    RS庫存編號:
    168-7763
    製造零件編號:
    GT15J341
    製造商:
    Toshiba
    Toshiba

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    當前暫無庫存,可於22/12/2022發貨,6 工作日送達。
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    單價(不含稅) 毎管:50 個

    TWD42.70

    (不含稅)

    TWD44.84

    (含稅)

    單位Per unitPer Tube*
    50 +TWD42.70TWD2,135.00
    * 參考價格
    RS庫存編號:
    168-7763
    製造零件編號:
    GT15J341
    製造商:
    Toshiba
    COO (Country of Origin):
    JP

    法例與合規

    COO (Country of Origin):
    JP

    產品詳細資訊

    IGBT Discretes, Toshiba



    IGBT Discretes & Modules, Toshiba


    The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


    規格

    屬性
    Maximum Continuous Collector Current15 A
    Maximum Collector Emitter Voltage600 V
    Maximum Gate Emitter Voltage±25V
    Maximum Power Dissipation30 W
    Package TypeTO-220SIS
    Mounting TypeThrough Hole
    Channel TypeN
    Pin Count3
    Switching Speed100kHz
    Transistor ConfigurationSingle
    Dimensions10 x 4.5 x 15mm
    Maximum Operating Temperature+150 °C
    當前暫無庫存,可於22/12/2022發貨,6 工作日送達。
    Add to Basket
    單位

    已增加

    單價(不含稅) 毎管:50 個

    TWD42.70

    (不含稅)

    TWD44.84

    (含稅)

    單位Per unitPer Tube*
    50 +TWD42.70TWD2,135.00
    * 參考價格