Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole
- RS庫存編號:
- 168-7763
- 製造零件編號:
- GT15J341
- 製造商:
- Toshiba
此圖片僅供參考，請參閲產品詳細資訊及規格
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當前暫無庫存，可於22/12/2022發貨，6 工作日送達。
單價（不含稅） 毎管：50 個
TWD42.70
(不含稅)
TWD44.84
(含稅)
| 單位 | Per unit | Per Tube* |
| 50 + | TWD42.70 | TWD2,135.00 |
| * 參考價格 | ||
- RS庫存編號:
- 168-7763
- 製造零件編號:
- GT15J341
- 製造商:
- Toshiba
- COO (Country of Origin):
- JP
法例與合規
- COO (Country of Origin):
- JP
產品詳細資訊
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
| 屬性 | 值 |
| Maximum Continuous Collector Current | 15 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 30 W |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 100kHz |
| Transistor Configuration | Single |
| Dimensions | 10 x 4.5 x 15mm |
| Maximum Operating Temperature | +150 °C |