IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole
- RS庫存編號:
- 168-4585
- 製造零件編號:
- IXXH80N65B4H1
- 製造商:
- IXYS
當前暫無庫存，可於09/06/2025發貨，6 工作日送達。
單價（不含稅） 毎管：30 個
TWD400.10
(不含稅)
TWD420.10
(含稅)
單位 | 每單位 | Per Tube* |
|---|---|---|
| 30 - 30 | TWD400.10 | TWD12,003.00 |
| 60 - 90 | TWD391.50 | TWD11,745.00 |
| 120 + | TWD382.80 | TWD11,484.00 |
* 參考價格
- RS庫存編號:
- 168-4585
- 製造零件編號:
- IXXH80N65B4H1
- 製造商:
- IXYS
法例與合規
- COO (Country of Origin):
- PH
產品詳細資訊
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
屬性 | 值 |
|---|---|
| Maximum Continuous Collector Current | 430 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 625 W |
| Number of Transistors | 1 |
| Package Type | TO-247AD |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 5 → 30kHz |
| Transistor Configuration | Single |
| Dimensions | 16.1 x 5.2 x 21.3mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
| Energy Rating | 5.2mJ |