Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ

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COO (Country of Origin): CN
產品詳細資訊

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
屬性
Maximum Continuous Collector Current 150 (Pulse) A
Maximum Collector Emitter Voltage 400 V
Maximum Gate Emitter Voltage ±6V
Maximum Power Dissipation 1.6 W
Package Type TSOJ
Mounting Type Surface Mount
Channel Type N
Pin Count 8
Transistor Configuration Single
Length 3.1mm
Width 2.5mm
Height 1mm
Dimensions 3.1 x 2.5 x 1mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Gate Capacitance 5100pF
48 在6 工作日內發貨 (海外庫存)
80 在4 工作日內發貨 (海外庫存)
單價(不含稅) /個 (每包:4個)
TWD 37.3000
(不含稅)
TWD 39.2000
(含稅)
單位
Per unit
Per Pack*
4 - 16
TWD37.3000
TWD149.2000
20 - 36
TWD31.8000
TWD127.2000
40 - 196
TWD27.0000
TWD108.0000
200 - 396
TWD23.0000
TWD92.0000
400 +
TWD19.8000
TWD79.2000
* 參考價格
包裝方式: