- RS庫存編號:
- 273-5262
- 製造零件編號:
- CY15B104Q-LHXIT
- 製造商:
- Infineon
當前暫無庫存,可於19/08/2024發貨,6 工作日送達。
已增加
單價(不含稅) 個
TWD935.00
(不含稅)
TWD981.75
(含稅)
單位 | Per unit |
1 - 49 | TWD935.00 |
50 + | TWD841.00 |
- RS庫存編號:
- 273-5262
- 製造零件編號:
- CY15B104Q-LHXIT
- 製造商:
- Infineon
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The Infineon FRAM Memory is a 4 Mbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non volatile memories.
RoHS compliant
Low voltage operation
Low power consumption
Very fast serial peripheral interface
Sophisticated write protection scheme
Low voltage operation
Low power consumption
Very fast serial peripheral interface
Sophisticated write protection scheme
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
屬性 | 值 |
---|---|
Memory Size | 4Mbit |
Organisation | 512K x 8 |
Interface Type | Serial-SPI |
Data Bus Width | 8bit |
Package Type | SOIC |
Pin Count | 8 |