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Flash Memory
Winbond SLC NAND 1Gbit Parallel Flash Memory 63-Pin VFBGA, W29N01HVBINA
RS庫存編號:
188-2549
製造零件編號:
W29N01HVBINA
製造商:
Winbond
查看所有Flash Memory
單價(不含稅) 個
TWD108.40
(不含稅)
TWD113.82
(含稅)
Add to Basket
單位
選擇或輸入數量
添加到購物車
305 現貨庫存,可於6工作日發貨。
即時庫存查詢
單位
每單位
Per Tray*
210 - 840
TWD108.40
TWD22,764.00
1050 +
TWD104.10
TWD21,861.00
* 參考價格
添加到收藏夾
RS庫存編號:
188-2549
製造零件編號:
W29N01HVBINA
製造商:
Winbond
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
Datasheet W29N01HVBINA
相容
符合聲明
Density : 1Gbit (Single chip solution)
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 1G-bit/128M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Copy Back
Lowest power consumption
Read: 25mA(typ.3V),
Program/Erase: 25mA(typ.3V),
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
48-ball VFBGA
63-ball VFBGA
1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
屬性
值
Memory Size
1Gbit
Interface Type
Parallel
Package Type
VFBGA
Pin Count
63
Organisation
128M x 8 bit
Mounting Type
Surface Mount
Cell Type
SLC NAND
Minimum Operating Supply Voltage
2.7 V
Maximum Operating Supply Voltage
3.6 V
Block Organisation
Symmetrical
Length
11.1mm
Height
0.6mm
Width
9.1mm
Dimensions
11.1 x 9.1 x 0.6mm
Number of Bits per Word
8bit
Maximum Operating Temperature
+85 °C
Series
W29N
Number of Words
128M
Maximum Random Access Time
25µs
Minimum Operating Temperature
-40 °C