ON Semiconductor, MJB45H11T4G

產品概覽和技術數據資料表
法例與合規
相容
COO (Country of Origin): MY
產品詳細資訊

The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.

Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
PbFree Packages are Available

規格
屬性
Transistor Type PNP
Number of Elements per Chip 1
Maximum Continuous Collector Current 10 A
Maximum Collector Emitter Voltage 80 V dc
Mounting Type Surface Mount
Package Type D2PAK
Pin Count 2 + Tab
Minimum DC Current Gain 40
Maximum Power Dissipation 50 W
Transistor Configuration Single
Maximum Collector Emitter Saturation Voltage 1 V dc
Maximum Emitter Base Voltage 5 V dc
Configuration Single
Maximum Operating Temperature +150 °C
Height 4.83mm
Automotive Standard AEC-Q101
Maximum Base Emitter Saturation Voltage 1.5 V dc
Minimum Operating Temperature -55 °C
Length 10.29mm
Dimensions 10.29 x 9.65 x 4.83mm
Width 9.65mm
1600 現貨庫存,可於6工作日發貨。
單價(不含稅) /個 (每包:10個)
TWD 39.60
(不含稅)
TWD 41.60
(含稅)
單位
Per unit
Per Pack*
10 - 10
TWD39.60
TWD396.00
20 - 40
TWD38.80
TWD388.00
50 - 90
TWD38.10
TWD381.00
100 - 240
TWD30.40
TWD304.00
250 +
TWD29.80
TWD298.00
* 參考價格
包裝方式: