onsemi MJH11019G PNP Digital Transistor, -200 V, 3-Pin SOT-93
- RS庫存編號:
- 186-7418
- 製造零件編號:
- MJH11019G
- 製造商:
- onsemi
當前暫無庫存，可於01/07/2024發貨，6 工作日送達。
已增加
單價（不含稅） 毎管：30 個
TWD94.90
(不含稅)
TWD99.64
(含稅)
| 單位 | Per unit | Per Tube* |
| 30 - 30 | TWD94.90 | TWD2,847.00 |
| 60 - 90 | TWD92.80 | TWD2,784.00 |
| 120 + | TWD90.70 | TWD2,721.00 |
| * 參考價格 | ||
- RS庫存編號:
- 186-7418
- 製造零件編號:
- MJH11019G
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJH11017, MJH11019, MJH11021 (PNP), MJH11018, MJH11020, MJH11022 (NPN) are complementary devices.
High DC Current Gain @ 10 Adc - hFE = 400 Min (All Types)
Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21
Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A
Monolithic Construction
Pb-Free Packages are Available
Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21
Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A
Monolithic Construction
Pb-Free Packages are Available
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
屬性 | 值 |
|---|---|
| Transistor Type | PNP |
| Maximum Collector Emitter Voltage | -200 V |
| Package Type | SOT-93 |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Emitter Base Voltage | 5 V dc |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Dimensions | 15.2 x 4.9 x 20.35mm |