This Single P-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(ON) @ VGS = -2.5V.
-150 mA, 20 V RDS(ON) = 8 Ω @ VGS = -4.5 V RDS(ON) = 12 Ω @ VGS = -2.5 V ESD protection diode (note 3) Applications This product is general usage and suitable for many different applications. Li-Ion Battery Pack