MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS庫存編號 159-6516
製造零件編號IRFP460BPBF
BrandVishay
TWD93.30
毎管:25 個
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N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS庫存編號 787-9140
製造零件編號IRFP460BPBF
BrandVishay
TWD125.00
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N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS庫存編號 178-0786
製造零件編號IRFP9240PBF
BrandVishay
TWD82.40
毎管:25 個
單位
- - - - - - - - - - - - - -
RS庫存編號 541-0862
製造零件編號IRFP9240PBF
BrandVishay
TWD92.00
單位
P 12 A 200 V 500 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 150 W Single 1
RS庫存編號 165-2816
製造零件編號SUP57N20-33-E3
BrandVishay
TWD132.30
毎管:50 個
單位
N 57 A 200 V 33 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 3.75 W Single 1
RS庫存編號 708-5014
製造零件編號SUP57N20-33-E3
BrandVishay
TWD151.00
/個 (每包:5個)
單位
N 57 A 200 V 33 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 3.75 W Single 1
RS庫存編號 541-1146
製造零件編號IRFBG30PBF
BrandVishay
TWD62.00
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N 3.1 A 1000 V 5 Ω TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 125 W Single 1
RS庫存編號 542-9557
製造零件編號IRFBF30PBF
BrandVishay
TWD75.00
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N 3.6 A 900 V 3.7 Ω TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 125 W Single 1
RS庫存編號 541-1691
製造零件編號IRFD120PBF
BrandVishay
TWD34.00
單位
N 1.3 A 100 V 270 mΩ HVMDIP Through Hole 4 -20 V, +20 V Enhancement - 2V 1.3 W Single 1
RS庫存編號 178-0921
製造零件編號IRFD120PBF
BrandVishay
TWD17.70
毎管:100 個
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N 1.3 A 100 V 270 mΩ HVMDIP Through Hole 4 -20 V, +20 V Enhancement - 2V 1.3 W Single 1
RS庫存編號 178-0920
製造零件編號IRFD9110PBF
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TWD18.80
毎管:100 個
單位
- - - - - - - - - - - - - -
RS庫存編號 178-0844
製造零件編號IRFBF30PBF
BrandVishay
TWD63.40
毎管:50 個
單位
N 3.6 A 900 V 3.7 Ω TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 125 W Single 1
RS庫存編號 541-0749
製造零件編號IRFD9110PBF
BrandVishay
TWD31.00
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P 700 mA 100 V 1.2 Ω HVMDIP Through Hole 4 -20 V, +20 V Enhancement - 2V 1.3 W Single 1
RS庫存編號 165-6973
製造零件編號SI7615ADN-T1-GE3
BrandVishay
TWD9.60
個 (在毎卷:3000)
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P 35 A 20 V 9.8 mΩ PowerPAK 1212 Surface Mount 8 -12 V, +12 V Enhancement - 0.4V 52 W Single 1
RS庫存編號 787-9248
製造零件編號SI7615ADN-T1-GE3
BrandVishay
TWD21.20
/個 (每包:10個)
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P 35 A 20 V 9.8 mΩ PowerPAK 1212 Surface Mount 8 -12 V, +12 V Enhancement - 0.4V 52 W Single 1
RS庫存編號 145-2044
製造零件編號IRFP244PBF
BrandVishay
TWD107.80
毎管:25 個
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N 15 A 250 V 280 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 150 W Single 1
RS庫存編號 541-0553
製造零件編號IRFD9120PBF
BrandVishay
TWD36.00
單位
P 1 A 100 V 600 mΩ HVMDIP Through Hole 4 -20 V, +20 V Enhancement - 2V 1.3 W Single 1
RS庫存編號 178-0801
製造零件編號IRFP450APBF
BrandVishay
TWD73.20
毎管:25 個
單位
- - - - - - - - - - - - - -
RS庫存編號 178-0917
製造零件編號IRFD9120PBF
BrandVishay
TWD20.60
毎管:100 個
單位
- - - - - - - - - - - - - -
RS庫存編號 815-2758
製造零件編號IRFP244PBF
BrandVishay
TWD126.20
/個 (每包:5個)
單位
N 15 A 250 V 280 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 150 W Single 1