- RS庫存編號:
- 124-3701
- 製造零件編號:
- RJH60F3DPQ-A0#T0
- 製造商:
- Renesas Electronics
此產品已停售
- RS庫存編號:
- 124-3701
- 製造零件編號:
- RJH60F3DPQ-A0#T0
- 製造商:
- Renesas Electronics
法例與合規
- COO (Country of Origin):
- JP
產品詳細資訊
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
屬性 | 值 |
---|---|
Maximum Continuous Collector Current | 40 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±30V |
Maximum Power Dissipation | 178.5 W |
Package Type | TO-247A |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.94 x 5.02 x 21.13mm |
Gate Capacitance | 1260pF |
Maximum Operating Temperature | +150 °C |