Renesas Electronics SRAM, R1LV0216BSB-5SR#B0- 2Mbit, 3, 3.3

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COO (Country of Origin): JP
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Low Power SRAM, Renesas Electronics

The R1LV Series of advanced low voltage static RAMs is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives.

Single 2.7V to 3.6V power supply
Small stand-by current
No clocks, No refresh required
All inputs and outputs are TTL compatible
Three-state outputs: OR-tie Capability

SRAM (Static Random Access Memory)

規格
屬性
Memory Size 2Mbit
Organisation 128K x 16 bit
Number of Words 128K
Number of Bits per Word 16bit
Maximum Random Access Time 55ns
Low Power Yes
Timing Type Asynchronous
Mounting Type Surface Mount
Package Type TSOP
Pin Count 44
Width 11.76mm
Minimum Operating Temperature -40 °C
Maximum Operating Supply Voltage 3.6 V
Maximum Operating Temperature +85 °C
Minimum Operating Supply Voltage 2.7 V
Length 18.41mm
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