Infineon 1200V 19.1A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH05G120C5XKSA1
- RS庫存編號:
- 133-9857
- 製造零件編號:
- IDH05G120C5XKSA1
- 製造商:
- Infineon
此產品已停售
- RS庫存編號:
- 133-9857
- 製造零件編號:
- IDH05G120C5XKSA1
- 製造商:
- Infineon
法例與合規
- COO (Country of Origin):
- MY
產品詳細資訊
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
規格
屬性 | 值 |
|---|---|
| Mounting Type | Through Hole |
| Package Type | TO-220 |
| Maximum Continuous Forward Current | 19.1A |
| Peak Reverse Repetitive Voltage | 1200V |
| Diode Configuration | Single |
| Diode Type | SiC Schottky |
| Pin Count | 2 + Tab |
| Maximum Forward Voltage Drop | 2.6V |
| Number of Elements per Chip | 1 |
| Diode Technology | SiC Schottky |
| Peak Non-Repetitive Forward Surge Current | 59A |