N-Channel MOSFET, 21 A, 560 V, 3-Pin TO-247 Infineon SPW21N50C3FKSA1
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單價（不含稅） /個 (每包:4個)
TWD136.50
(不含稅)
TWD143.32
(含稅)
| 單位 | Per unit | Per Pack* |
| 4 - 4 | TWD136.50 | TWD546.00 |
| 8 - 36 | TWD130.50 | TWD522.00 |
| 40 - 76 | TWD114.30 | TWD457.20 |
| 80 - 196 | TWD107.80 | TWD431.20 |
| 200 + | TWD106.50 | TWD426.00 |
| * 參考價格 | ||
已增加
- RS庫存編號:
- 897-7179
- 製造零件編號:
- SPW21N50C3FKSA1
- 製造商:
- Infineon
Infineon CoolMOS™C3 Power MOSFET
| 屬性 | 值 |
| Channel Type | N |
| Maximum Continuous Drain Current | 21 A |
| Maximum Drain Source Voltage | 560 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 190 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.9V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 208 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 5.16mm |
| Transistor Material | Si |
| Series | CoolMOS C3 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +150 °C |
| Length | 16.03mm |
| Typical Gate Charge @ Vgs | 95 nC @ 10 V |
| Height | 21.1mm |