N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC Vishay IRFP460BPBF
- RS庫存編號:
- 787-9140
- 製造零件編號:
- IRFP460BPBF
- 製造商:
- Vishay
39 "將在 2 工作日發貨 （本地庫存） "
92 在6 工作日內發貨 (海外庫存)
已增加
單價（不含稅） 個
TWD98.00
(不含稅)
TWD102.90
(含稅)
| 單位 | Per unit |
| 1 - 6 | TWD98.00 |
| 7 - 12 | TWD96.00 |
| 13 + | TWD95.00 |
- RS庫存編號:
- 787-9140
- 製造零件編號:
- IRFP460BPBF
- 製造商:
- Vishay
法例與合規
產品詳細資訊
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
Vishay D Series Power MOSFETs
FEATURES
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• SMPS
- Power Factor Correction (PFC)
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• SMPS
- Power Factor Correction (PFC)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-247AC |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 250 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 278 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 5.31mm |
| Length | 15.87mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Series | D Series |
| Minimum Operating Temperature | -55 °C |
| Height | 20.82mm |