2SJ626-T1B-A P-Channel MOSFET, 6 A, 60 V, 3-Pin SOT-346T Renesas

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P-Channel MOSFET, Renesas Electronics (NEC)

MOSFET Transistors, Renesas Electronics (NEC)

規格
屬性
Channel Type P
Maximum Continuous Drain Current 6 A
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 550 mΩ
Maximum Gate Threshold Voltage 2.5V
Maximum Gate Source Voltage -20 V, +20 V
Package Type SOT-346T (SC-96)
Mounting Type Surface Mount
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 1.25 W
Number of Elements per Chip 1
Height 1mm
Maximum Operating Temperature +150 °C
Length 2.9mm
Transistor Material Si
Width 1.5mm
Typical Gate Charge @ Vgs 8.2 nC @ 10 V
40 現貨庫存,可於4工作日發貨。
單價(不含稅) 個 (以每卷裝提供) Quantities below 150 on continuous strip
TWD 7
(不含稅)
TWD 8
(含稅)
單位
Per unit
40 - 80
TWD7
100 - 180
TWD7
200 - 380
TWD7
400 +
TWD7
包裝方式: