2SJ626-T1B-A P-Channel MOSFET, 6 A, 60 V, 3-Pin SOT-346T Renesas

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P-Channel MOSFET, Renesas Electronics (NEC)

MOSFET Transistors, Renesas Electronics (NEC)

規格
屬性
Channel Type P
Maximum Continuous Drain Current 6 A
Maximum Drain Source Voltage 60 V
Package Type SOT-346T (SC-96)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 550 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 1.25 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Width 1.5mm
Height 1mm
Length 2.9mm
Transistor Material Si
Typical Gate Charge @ Vgs 8.2 nC @ 10 V
Maximum Operating Temperature +150 °C
140 現貨庫存,可於4工作日發貨。
單價(不含稅) /個 (每包:20個)
TWD 7.5000
(不含稅)
TWD 7.9000
(含稅)
單位
Per unit
Per Pack*
20 - 20
TWD7.5000
TWD150.0000
40 - 80
TWD7.3000
TWD146.0000
100 - 180
TWD7.2000
TWD144.0000
200 - 380
TWD7.0000
TWD140.0000
400 +
TWD6.9000
TWD138.0000
* 參考價格
包裝方式: