2SJ626-T1B-A P-Channel MOSFET, 6 A, 60 V, 3-Pin SOT-346T Renesas

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P-Channel MOSFET, Renesas Electronics (NEC)

MOSFET Transistors, Renesas Electronics (NEC)

規格
屬性
Channel Type P
Maximum Continuous Drain Current 6 A
Maximum Drain Source Voltage 60 V
Package Type SOT-346T (SC-96)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 550 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 1.25 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Length 2.9mm
Typical Gate Charge @ Vgs 8.2 nC @ 10 V
Height 1mm
Width 1.5mm
Maximum Operating Temperature +150 °C
Transistor Material Si
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