2SJ601-AZ P-Channel MOSFET, 120 A, 60 V, 4-Pin IPAK Renesas

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P-Channel MOSFET, Renesas Electronics (NEC)

MOSFET Transistors, Renesas Electronics (NEC)

規格
屬性
Channel Type P
Maximum Continuous Drain Current 120 A
Maximum Drain Source Voltage 60 V
Package Type IPAK (TO-251)
Mounting Type Through Hole
Pin Count 4
Maximum Drain Source Resistance 46 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 65 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Height 2.3mm
Width 7mm
Typical Gate Charge @ Vgs 63 nC @ 10 V
Transistor Material Si
Length 6.5mm
Maximum Operating Temperature +150 °C
630 現貨庫存,可於4工作日發貨。
單價(不含稅) 個 (以每袋裝提供)
TWD 39.8000
(不含稅)
TWD 41.8000
(含稅)
單位
Per unit
25 - 95
TWD39.8000
100 - 245
TWD39.4000
250 - 495
TWD38.8000
500 +
TWD38.4000
包裝方式: