MOSFET, 5 A, 55 V SOT-223 Infineon IRLL024ZTRPBF

The Infineon HEXFET power MOSFET is Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

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