N-Channel MOSFET, 80 A, 30 V, 8-Pin HSOP ROHM RS1E321GNTB1

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產品概覽和技術數據資料表

RS1E321GN is a power MOSFET with low-on resistance and High power package, suitable for switching.

Low on - resistance
High power package (HSOP8)
Pb-free lead plating
Halogen free

屬性	值
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	30 V
Package Type	HSOP
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	2.9 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	34 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	1
Width	5mm
Maximum Operating Temperature	150 °C
Length	5.8mm
Typical Gate Charge @ Vgs	42.8 nC @ 10 V
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C
Height	1.05mm
Series	RS1E321GN