- RS庫存編號:
- 180-7911
- 製造零件編號:
- SI3585CDV-T1-GE3
- 製造商:
- Vishay
當前暫無庫存,可於28/06/2024發貨,6 工作日送達。
已增加
單價(不含稅) 個 (每包:20個)
TWD14.10
(不含稅)
TWD14.80
(含稅)
單位 | Per unit | Per Pack* |
20 - 740 | TWD14.10 | TWD282.00 |
760 - 1480 | TWD13.70 | TWD274.00 |
1500 + | TWD13.50 | TWD270.00 |
* 參考價格 |
- RS庫存編號:
- 180-7911
- 製造零件編號:
- SI3585CDV-T1-GE3
- 製造商:
- Vishay
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
Vishay MOSFET
The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V. The MOSFET has drain-source resistance of 58mohm at a gate-source voltage of 4.5V. It has continuous drain currents of 3.9A and 2.1A. It has a maximum power rating of 1.4W and 1.3W. It has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• DC-DC converters
• Drivers: motor, solenoid, relay
• Load switch for portable devices
• Drivers: motor, solenoid, relay
• Load switch for portable devices
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• BS EN 61340-5-1:2007
• Rg tested
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
屬性 | 值 |
---|---|
Channel Type | N, P |
Maximum Continuous Drain Current | 3.9 A, 2.1 A |
Maximum Drain Source Voltage | 20 V |
Series | TrenchFET |
Package Type | TSOP-6 |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 0.058 O,0.195 O |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1.5V |
Number of Elements per Chip | 2 |