P-Channel MOSFET, 700 mA, 100 V, 4-Pin HVMDIP Vishay IRFD9110PBF
- RS庫存編號:
- 178-0920
- 製造零件編號:
- IRFD9110PBF
- 製造商:
- Vishay
當前暫無庫存，可於26/09/2024發貨，6 工作日送達。
已增加
單價（不含稅） 毎管：100 個
TWD33.10
(不含稅)
TWD34.76
(含稅)
| 單位 | Per unit | Per Tube* |
| 100 - 100 | TWD33.10 | TWD3,310.00 |
| 200 - 300 | TWD32.40 | TWD3,240.00 |
| 400 + | TWD31.60 | TWD3,160.00 |
| * 參考價格 | ||
- RS庫存編號:
- 178-0920
- 製造零件編號:
- IRFD9110PBF
- 製造商:
- Vishay
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centres.
Dynamic dV/dt rating
Repetitive avalanche rated
Repetitive avalanche rated
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
規格
屬性 | 值 |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 700 mA |
| Maximum Drain Source Voltage | 100 V |
| Package Type | HVMDIP |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 1.2 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 1.3 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 8.7 nC @ 10 V |
| Width | 6.29mm |
| Transistor Material | Si |
| Length | 5mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Height | 3.37mm |
| Minimum Operating Temperature | -55 °C |