N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM ROHM R6520ENX
- RS庫存編號:
- 177-6115
- 製造零件編號:
- R6520ENX
- 製造商:
- ROHM
此產品暫時不接受預訂。
抱歉，此產品暫無現貨，目前也不接受預訂。
已增加
單價（不含稅） 每個 (每盤 500 個)
TWD99.00
(不含稅)
TWD103.95
(含稅)
| 單位 | Per unit | Per Bag* |
| 500 - 500 | TWD99.00 | TWD49,500.00 |
| 1000 - 1000 | TWD98.00 | TWD49,000.00 |
| 1500 + | TWD97.00 | TWD48,500.00 |
| * 參考價格 | ||
- RS庫存編號:
- 177-6115
- 製造零件編號:
- R6520ENX
- 製造商:
- ROHM
產品概覽和技術數據資料表
法例與合規
不適用
- COO (Country of Origin):
- JP
產品詳細資訊
R6520ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating
Fast switching speed
Parallel use is easy
Pb-free plating
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 650 V |
| Series | R6520ENX |
| Package Type | TO-220FM |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 200 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 68 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 61 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Length | 10.3mm |
| Width | 4.8mm |
| Height | 15.4mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.5V |