N-Channel MOSFET, 20 A, 200 V, 3-Pin DPAK Nexperia PSMN130-200D,118

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產品概覽和技術數據資料表

MOSFET Transistors, NXP Semiconductors

屬性	值
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Voltage	200 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	130 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Width	6.22mm
Typical Gate Charge @ Vgs	65 nC @ 10 V
Height	2.38mm
Minimum Operating Temperature	-55 °C