P-Channel MOSFET Transistor, 5 A, 60 V, 3-Pin TPS Toshiba 2SJ669(Q)

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產品概覽和技術數據資料表

MOSFET Transistors, Toshiba

屬性	值
Channel Type	P
Maximum Continuous Drain Current	5 A
Maximum Drain Source Voltage	60 V
Package Type	TPS
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	170 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	1.2 W
Maximum Gate Source Voltage	-20 V, +20 V
Length	8mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	15 nC @ 10 V
Width	3.5mm
Minimum Operating Temperature	-55 °C
Height	7mm