Renesas NE3514S02-A N-Channel JFET, 4 V, Idss 15 → 70mA, 4-Pin SO2

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N-Channel HEMT, Renesas

A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

規格
屬性
Channel Type N
Idss Drain-Source Cut-off Current 15 → 70mA
Maximum Drain Source Voltage 4 V
Maximum Gate Source Voltage -3 V
Transistor Configuration Single
Configuration Single
Mounting Type Surface Mount
Package Type SO2
Pin Count 4
Dimensions 2.6 x 2.6 x 1.5mm
Height 1.5mm
Maximum Operating Temperature +125 °C
Length 2.6mm
Width 2.6mm
現貨庫存,可於6工作日發貨。
單價(不含稅) /個 (每包:10個)
TWD 43
(不含稅)
TWD 45
(含稅)
單位
Per unit
Per Pack*
10 - 10
TWD43
TWD426
20 - 40
TWD42
TWD418
50 - 90
TWD36
TWD361
100 - 190
TWD31
TWD305
200 +
TWD27
TWD270
* 參考價格
包裝方式: