STMicroelectronics STGP5H60DF IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole
- RS庫存編號:
- 906-2808
- 製造零件編號:
- STGP5H60DF
- 製造商:
- STMicroelectronics
120 現貨庫存，可於6工作日發貨。
已增加
單價（不含稅） 個 (每包:10個)
TWD40.80
(不含稅)
TWD42.84
(含稅)
| 單位 | Per unit | Per Pack* |
| 10 - 10 | TWD40.80 | TWD408.00 |
| 20 - 20 | TWD39.70 | TWD397.00 |
| 30 + | TWD39.10 | TWD391.00 |
| * 參考價格 | ||
- RS庫存編號:
- 906-2808
- 製造零件編號:
- STGP5H60DF
- 製造商:
- STMicroelectronics
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
屬性 | 值 |
|---|---|
| Maximum Continuous Collector Current | 10 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 88 W |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 4.6 x 15.75mm |
| Maximum Operating Temperature | +175 °C |
| Gate Capacitance | 855pF |
| Minimum Operating Temperature | -55 °C |
| Energy Rating | 221mJ |