Fairchild ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole
- RS庫存編號:
- 862-9359
- 製造零件編號:
- ISL9V3040P3
- 製造商:
- Fairchild Semiconductor
10 現貨庫存，可於6工作日發貨。
已增加
單價（不含稅） 個 (每包:5個)
TWD87.20
(不含稅)
TWD91.56
(含稅)
| 單位 | Per unit | Per Pack* |
| 5 - 10 | TWD87.20 | TWD436.00 |
| 15 - 20 | TWD85.20 | TWD426.00 |
| 25 + | TWD83.60 | TWD418.00 |
| * 參考價格 | ||
- RS庫存編號:
- 862-9359
- 製造零件編號:
- ISL9V3040P3
- 製造商:
- Fairchild Semiconductor
法例與合規
產品詳細資訊
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
屬性 | 值 |
|---|---|
| Maximum Continuous Collector Current | 21 A |
| Maximum Collector Emitter Voltage | 450 V |
| Maximum Gate Emitter Voltage | ±14V |
| Maximum Power Dissipation | 150 W |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.67 x 4.7 x 16.3mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +175 °C |