- RS庫存編號:
- 804-7616
- 製造零件編號:
- IXDN55N120D1
- 製造商:
- IXYS
當前暫無庫存,可於24/06/2024發貨,6 工作日送達。
已增加
單價(不含稅) 個
TWD1,202.00
(不含稅)
TWD1,262.10
(含稅)
單位 | Per unit |
1 - 2 | TWD1,202.00 |
3 - 4 | TWD1,173.00 |
5 + | TWD1,157.00 |
- RS庫存編號:
- 804-7616
- 製造零件編號:
- IXDN55N120D1
- 製造商:
- IXYS
法例與合規
產品詳細資訊
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
屬性 | 值 |
---|---|
Maximum Continuous Collector Current | 100 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 450 W |
Package Type | SOT-227B |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 4 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 38.2 x 25.07 x 9.6mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |