Renesas Electronics RJH60D6DPK-00#T0 IGBT, 80 A 600 V, 3-Pin TO-3P

COO (Country of Origin): JP

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 260 W
Package Type TO-3P
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.6mm
Width 4.8mm
Height 14.9mm
Dimensions 15.6 x 4.8 x 14.9mm
Maximum Operating Temperature +150 °C