onsemi FGH75T65SHDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole
- RS庫存編號:
- 181-1866
- 製造零件編號:
- FGH75T65SHDTL4
- 製造商:
- onsemi
當前暫無庫存，可於05/07/2024發貨，6 工作日送達。
已增加
單價（不含稅） 毎管：450 個
TWD134.30
(不含稅)
TWD141.02
(含稅)
| 單位 | Per unit | Per Tube* |
| 450 - 450 | TWD134.30 | TWD60,435.00 |
| 900 - 1350 | TWD131.40 | TWD59,130.00 |
| 1800 + | TWD128.40 | TWD57,780.00 |
| * 參考價格 | ||
- RS庫存編號:
- 181-1866
- 製造零件編號:
- FGH75T65SHDTL4
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
屬性 | 值 |
|---|---|
| Maximum Continuous Collector Current | 150 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 455 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | P |
| Pin Count | 4 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5.2 x 22.74mm |
| Energy Rating | 160mJ |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
| Gate Capacitance | 3710pF |