MOSFET Vishay SIA537EDJ-T1-GE3

RS庫存編號:: 180-7808
製造零件編號:: SIA537EDJ-T1-GE3
製造商:: Vishay

當前暫無庫存，可於17/07/2025發貨，6 工作日送達。

單價（不含稅）個 (每包:20個)

TWD14.90

(不含稅)

TWD15.64

單位	Per unit	Per Pack*
20 - 740	TWD14.90	TWD298.00
760 - 1480	TWD14.60	TWD292.00
1500 +	TWD14.30	TWD286.00
* 參考價格

RS庫存編號:: 180-7808
製造零件編號:: SIA537EDJ-T1-GE3
製造商:: Vishay

產品概覽和技術數據資料表

Datasheet

法例與合規

COO (Country of Origin):: CN

產品詳細資訊

The Vishay SIA537EDJ is a P&N-channel MOSFET having drain to source voltage(Vds) of -20V for P-channel and 12V for N-channel. Gate to source voltage (VGS) 8V. It is having Power PAK SC-70 package. It is offers drain to source resistance (RDS.) of 0.028ohms at 4.5VGS and 0.033ohms at 2.5VGS. for N-channel and 0.054ohms, 0.07 for P-channel resp. Maximum drain current 4.5A for N-channel and -4.5 for P-channel.

Trench FET power MOSFETs
Typical ESD protection: N-channel 2400 V, P-channel 2000 V
100 % Rg tested

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