MOSFET Vishay SIA817EDJ-T1-GE3
- RS庫存編號:
- 180-7339
- 製造零件編號:
- SIA817EDJ-T1-GE3
- 製造商:
- Vishay
當前暫無庫存，可於17/09/2025發貨，6 工作日送達。
已增加
單價（不含稅） 個 (在毎卷：3000)
TWD5.30
(不含稅)
TWD5.56
(含稅)
| 單位 | Per unit | Per Reel* |
| 3000 - 3000 | TWD5.30 | TWD15,900.00 |
| 6000 + | TWD5.10 | TWD15,300.00 |
| * 參考價格 | ||
- RS庫存編號:
- 180-7339
- 製造零件編號:
- SIA817EDJ-T1-GE3
- 製造商:
- Vishay
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
The Vishay SIA817EDJ is a P-channel MOSFET with schottky diode having drain to source(Vds) voltage of -30V. It is having configuration of dual plus integrated schottky. The gate to source voltage(VGS) is 12V. It is having power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 4.5VGS. Maximum drain current -4.5A.
Little foot plus Schottky power MOSFET
Thermally enhanced Power PAK SC-70 package small footprint area low on resistance thin 0.75 mm profile
Typical ESD protection (MOSFET): 1500 V (HBM)
Thermally enhanced Power PAK SC-70 package small footprint area low on resistance thin 0.75 mm profile
Typical ESD protection (MOSFET): 1500 V (HBM)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.