onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole
- RS庫存編號:
- 166-2181
- 製造零件編號:
- FGA60N65SMD
- 製造商:
- onsemi
此產品暫時不接受預訂。
抱歉，此產品暫無現貨，目前也不接受預訂。
已增加
單價（不含稅） 毎管：30 個
TWD118.30
(不含稅)
TWD124.22
(含稅)
| 單位 | Per unit | Per Tube* |
| 30 - 30 | TWD118.30 | TWD3,549.00 |
| 60 - 90 | TWD115.80 | TWD3,474.00 |
| 120 + | TWD113.20 | TWD3,396.00 |
| * 參考價格 | ||
- RS庫存編號:
- 166-2181
- 製造零件編號:
- FGA60N65SMD
- 製造商:
- onsemi
法例與合規
產品詳細資訊
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
屬性 | 值 |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 600 W |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 20.1mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |