- RS庫存編號:
- 165-5304
- 製造零件編號:
- STGD5NB120SZT4
- 製造商:
- STMicroelectronics
當前暫無庫存,可於31/05/2024發貨,6 工作日送達。
已增加
單價(不含稅) 個 (在毎卷:2500)
TWD39.90
(不含稅)
TWD41.90
(含稅)
單位 | Per unit | Per Reel* |
2500 - 10000 | TWD39.90 | TWD99,750.00 |
12500 + | TWD37.90 | TWD94,750.00 |
* 參考價格 |
- RS庫存編號:
- 165-5304
- 製造零件編號:
- STGD5NB120SZT4
- 製造商:
- STMicroelectronics
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
屬性 | 值 |
---|---|
Maximum Continuous Collector Current | 10 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 75 W |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 6.6 x 6.2 x 2.4mm |
Gate Capacitance | 430pF |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
Energy Rating | 12.68mJ |