Renesas Electronics RJH60F3DPQ-A0#T0 IGBT, 40 A 600 V, 3-Pin TO-247A

產品概覽和技術數據資料表
法例與合規
相容
COO (Country of Origin): JP
產品詳細資訊

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
屬性
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 178.5 W
Package Type TO-247A
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.94mm
Width 5.02mm
Height 21.13mm
Dimensions 15.94 x 5.02 x 21.13mm
Maximum Operating Temperature +150 °C
Gate Capacitance 1260pF
4 現貨庫存,可於4工作日發貨。
單價(不含稅) /個 (每包:2個)
TWD 116
(不含稅)
TWD 122
(含稅)
單位
Per unit
Per Pack*
2 - 2
TWD116
TWD232
4 - 8
TWD105
TWD209
10 - 48
TWD95
TWD190
50 - 98
TWD87
TWD174
100 +
TWD80
TWD160
* 參考價格
包裝方式: