Renesas Electronics RJH60D3DPP-M0#T2 IGBT, 35 A 600 V, 3-Pin TO-220FL

COO (Country of Origin): JP

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Maximum Continuous Collector Current 35 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 40 W
Package Type TO-220FL
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 10mm
Width 4.5mm
Height 15mm
Dimensions 10 x 4.5 x 15mm
Gate Capacitance 900pF
Maximum Operating Temperature +150 °C