Renesas Electronics RJP65T43DPM-00#T1 IGBT, 40 A 650 V, 3+Tab-Pin TO-3PFM

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COO (Country of Origin): MY
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IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
屬性
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 68.8 W
Package Type TO-3PFM
Mounting Type Through Hole
Channel Type N
Pin Count 3+Tab
Transistor Configuration Single
Length 15.6mm
Width 5.5mm
Height 19.9mm
Dimensions 15.6 x 5.5 x 19.9mm
Gate Capacitance 1550pF
Maximum Operating Temperature +175 °C
2 現貨庫存,可於4工作日發貨。
單價(不含稅) /個 (每包:2個)
TWD 107.5000
(不含稅)
TWD 112.9000
(含稅)
單位
Per unit
Per Pack*
2 - 18
TWD107.5000
TWD215.0000
20 - 38
TWD96.5000
TWD193.0000
40 - 198
TWD87.5000
TWD175.0000
200 - 398
TWD80.5000
TWD161.0000
400 +
TWD74.0000
TWD148.0000
* 參考價格
包裝方式: